The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Sep. 16, 2012
Yael Nemirovsky, Haifa, IL;
Vitali Savuskan, Haifa, IL;
Sharon Bar-lev Shefi, Nofit, IL;
Igor Brouk, Haifa, IL;
Gil Visokolov, Shoham, IL;
Amos Fenigstein, Haifa, IL;
Tomer Leitner, Nahariya, IL;
Yael Nemirovsky, Haifa, IL;
Vitali Savuskan, Haifa, IL;
Sharon Bar-Lev Shefi, Nofit, IL;
Igor Brouk, Haifa, IL;
Gil Visokolov, Shoham, IL;
Amos Fenigstein, Haifa, IL;
Tomer Leitner, Nahariya, IL;
Abstract
A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile