The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Dec. 17, 2012
Applicant:

Intersil Americas Llc, Milpitas, CA (US);

Inventors:

Kenneth Dyer, Pleasanton, CA (US);

Eric Lee, San Francisco, CA (US);

Xijian Lin, Fremont, CA (US);

Assignee:

Intersil Americas LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0203 (2014.01); H01L 21/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14625 (2013.01); H01L 27/14629 (2013.01);
Abstract

Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical filter. The metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions. One or more inter-level dielectric layers separate the metal layers from one another. Each of the metal layers includes one or more metal portions and one or more dielectric portions. The uppermost metal layer is devoid of any metal portions underlying the optical filter.


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