The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jul. 20, 2012
Yoshiya Moriyama, Toyama, JP;
Hiromasa Fujimoto, Toyama, JP;
Satoru Itou, Hyogo, JP;
Susumu Akamatsu, Osaka, JP;
Hiroshi Ohkawa, Osaka, JP;
Yoshiya Moriyama, Toyama, JP;
Hiromasa Fujimoto, Toyama, JP;
Satoru Itou, Hyogo, JP;
Susumu Akamatsu, Osaka, JP;
Hiroshi Ohkawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a first-conductivity-type first MIS transistor and a second-conductivity-type second MIS transistor. The first and second MIS transistors include a first and a second gate insulating film formed on a first and a second active region surrounded by a separation region of a semiconductor substrate, and a first and a second gate electrode formed on the first and second gate insulating films. The first and second gate insulating films are separated from each other on a first separation region of the separation region. A distance s between first ends of the first and second active regions facing each other with the first separation region being interposed therebetween, and a protrusion amount dfrom the first end of the first active region to a first end of the first gate insulating film located on the first separation region establish a relationship d1<0.5s.