The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jun. 08, 2012
Koji Shirai, Kanagawa-ken, JP;
Ken Inadumi, Kanagawa-ken, JP;
Tsuyoshi Hirayu, Kanagawa-ken, JP;
Toshihiro Sakamoto, Kanagawa-ken, JP;
Koji Shirai, Kanagawa-ken, JP;
Ken Inadumi, Kanagawa-ken, JP;
Tsuyoshi Hirayu, Kanagawa-ken, JP;
Toshihiro Sakamoto, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate with a p-type conductivity, a buried layer with an n-type conductivity provided on the semiconductor substrate, a back gate layer with a p-type conductivity provided on the buried layer, a drain layer with an n-type conductivity provided on the back gate layer, a source layer with an n-type conductivity provided spaced from the drain layer, a gate electrode provided in a region immediately above a portion of the back gate layer between the drain layer and the source layer, and a drain electrode in contact with a part of an upper surface of the drain layer. A thickness of the drain layer in a region immediately below a contact surface between the drain layer and the drain electrode is half a total thickness of the back gate and drain layers in the region.