The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
May. 23, 2011
Masao Moriguchi, Osaka, JP;
Michiko Takei, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Tsuyoshi Inoue, Osaka, JP;
Tetsuo Fukaya, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Takatsugu Kusumi, Osaka, JP;
Yoshiki Nakatani, Osaka, JP;
Tetsuya Okamoto, Osaka, JP;
Kenji Nakanishi, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Michiko Takei, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Tsuyoshi Inoue, Osaka, JP;
Tetsuo Fukaya, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Takatsugu Kusumi, Osaka, JP;
Yoshiki Nakatani, Osaka, JP;
Tetsuya Okamoto, Osaka, JP;
Kenji Nakanishi, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A TFTincludes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, a drain electrode, etc. The semiconductor layeris comprised of a metal oxide semiconductor (IGZO), and has a source portionthat contacts the source electrode, a drain electrodethat contacts the drain electrode, and a channel portionthat is located between the source and drain portions. A reduced regionis formed at least in the channel portionof the semiconductor layer, and the reduced regionhas a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer