The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Dec. 02, 2010
Applicant:

Takehiko Okabe, Ichihara, JP;

Inventor:

Takehiko Okabe, Ichihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/26 (2006.01); H01L 23/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a semiconductor light emitting element () which is provided with: a laminated semiconductor layer which is formed on a substrate, and in which a first semiconductor layer having a first conductivity type, a light emitting layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type; a first electrode (first electrode ()) which is formed on a surface of the first semiconductor layer in the laminated semiconductor layer, and has a first opening () used for electrical connection with an outside; and a second electrode (second electrode ()) which is formed on a surface of the second semiconductor layer, and has a second opening () used for electrical connection with the outside. The surface of the second semiconductor layer is exposed by cutting off a part of the laminated semiconductor layer. The first opening () has, on the second opening () side of the first opening () in a planar view, an arc portion which is formed to keep approximately equal distance from an outer edge portion of the second opening (). With such a semiconductor light emitting element, workability and heat dissipation effects in the FC (flip-chip bonding) mounting technology of the semiconductor light emitting element are improved.


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