The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Aug. 07, 2012
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tsuyoshi Tanaka, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.