The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Oct. 12, 2011
Masato Negishi, Tokyo, JP;
Masato Negishi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor wafer has a plurality of optical semiconductor devices (namely, semiconductor lasers) which are formed from epitaxially grown layers and arranged across the surface of the semiconductor wafer. The InGaAs epitaxial layer of the semiconductor wafer has an opening (or groove) which continuously extends along and between the plurality of optical semiconductor devices, and which exposes the layer underlying the InGaAs epitaxial layer to at least the layer overlying the InGaAs epitaxial layer. The semiconductor wafer may be scribed along this opening to form a vertically extending crack therein.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile