The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jul. 19, 2012
Sang Heon Han, Suwon, KR;
DO Young Rhee, Seoul, KR;
Jong Hyun Lee, Seoul, KR;
Jin Young Lim, Gwacheon, KR;
Young Sun Kim, Suwon, KR;
Sang Heon Han, Suwon, KR;
Do Young Rhee, Seoul, KR;
Jong Hyun Lee, Seoul, KR;
Jin Young Lim, Gwacheon, KR;
Young Sun Kim, Suwon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.