The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Aug. 10, 2012
Mitsufumi Naoe, Akiruno, JP;
Mitsufumi Naoe, Akiruno, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for producing semiconductor device includes: performing first, second and third exposures of a photoresist film formed on a semiconductor wafer via a mask; wherein: first, second and third shot regions respectively defined by the first, second and third exposures are aligned in a first direction; the mask has a shot region including a peripheral scribe region having a first and second side crossing the first direction; the photoresist film is of positive type, a first pattern is formed as a light shielding pattern disposed on the first side, and a second pattern is formed as a light transmitting region disposed on the second side; the first and second exposures are performed in such a manner that the first and second patterns do not overlap each other; and the second and third exposures are performed in such a manner that the first and second patterns overlap each other.