The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Sep. 23, 2011
Toshikazu Nishida, Gainesville, FL (US);
Antonio Guillermo Acosta, Gainesville, FL (US);
John Anthony Rodriguez, Dallas, TX (US);
Theodore Sidney Moise, Dallas, TX (US);
Toshikazu Nishida, Gainesville, FL (US);
Antonio Guillermo Acosta, Gainesville, FL (US);
John Anthony Rodriguez, Dallas, TX (US);
Theodore Sidney Moise, Dallas, TX (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level.