The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jun. 17, 2011
Applicant:
Kazuo Kokumai, Atsugi, JP;
Inventor:
Kazuo Kokumai, Atsugi, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 27/14609 (2013.01); H01L 27/1464 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes steps of providing a substrate including a semiconductor portion, a non-porous semiconductor layer, and a porous semiconductor layer arranged between the semiconductor portion and the non-porous semiconductor layer, forming a porous oxide layer by oxidizing the porous semiconductor layer, forming a bonded substrate by bonding a supporting substrate to a surface, on a side of the non-porous semiconductor layer, of the substrate on which the porous oxide layer is formed, and separating the semiconductor portion from the bonded substrate by utilizing the porous oxide layer.