The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Jun. 15, 2011
Applicants:

Byoung-deog Choi, Suwon-si, KR;

Dong-ho Ahn, Hwaseong-si, KR;

Man-sug Kang, Suwon-si, KR;

Young-kuk Kim, Seoul, KR;

Jin-ho OH, Seongnam-si, KR;

Inventors:

Byoung-deog Choi, Suwon-si, KR;

Dong-ho Ahn, Hwaseong-si, KR;

Man-sug Kang, Suwon-si, KR;

Young-kuk Kim, Seoul, KR;

Jin-ho Oh, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups.


Find Patent Forward Citations

Choi, Byoung-deog. (2014). Methods of manufacturing non-volatile phase-change memory devices (U.S. Patent No. 8778728). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8778728

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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