The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jun. 15, 2011
Applicants:
Byoung-deog Choi, Suwon-si, KR;
Dong-ho Ahn, Hwaseong-si, KR;
Man-sug Kang, Suwon-si, KR;
Young-kuk Kim, Seoul, KR;
Jin-ho OH, Seongnam-si, KR;
Inventors:
Byoung-deog Choi, Suwon-si, KR;
Dong-ho Ahn, Hwaseong-si, KR;
Man-sug Kang, Suwon-si, KR;
Young-kuk Kim, Seoul, KR;
Jin-ho Oh, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups.