The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Aug. 04, 2009
Iodide single crystal, production process thereof, and scintillator comprising iodide single crystal
Kiyoshi Shimamura, Tsukuba, JP;
Encarnacion Antonia Garcia Villora, Tsukuba, JP;
Kenji Kitamura, Tsukuba, JP;
Kiyoshi Shimamura, Tsukuba, JP;
Encarnacion Antonia Garcia Villora, Tsukuba, JP;
Kenji Kitamura, Tsukuba, JP;
Sakai Chemical Industry Co., Ltd., Sakai-shi, Osaka, JP;
Abstract
An object of the invention is to provide an iodide single crystal material that provides a scintillator material for the next-generation TOF-PET, and a production process for high-quality iodide single crystal materials. The iodide single crystal material of the invention having the same crystal structure as LuIand activated by a luminescence center RE where RE is at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb is characterized in that a part or the whole of lutetium (Lu) in said iodide single crystal material is substituted by Y and/or Gd. The inventive production process for an iodide single crystal material is characterized by comprising a step of preparing starting materials comprising an RE metal or REI, I, and a metal of at least one element selected from the group consisting of Lu, Y and Gd and/or its iodide provided that when only Lu is selected, there is a Lu metal chosen; a step of maintaining said starting materials under vacuum; a step of heating said starting materials at a reaction temperature to create a raw polycrystal material containing at least XI:RE where X is said at least one selected element; and a step of turning said raw polycrystal material into a single crystal.