The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Mar. 24, 2008
Applicants:

Hidetoshi Fujii, Ishikawa-ken, JP;

Ryuichi Kubo, Ishikawa-ken, JP;

Inventors:

Hidetoshi Fujii, Ishikawa-ken, JP;

Ryuichi Kubo, Ishikawa-ken, JP;

Assignee:

Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, Kyoto-fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/22 (2013.01); H01L 41/083 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a piezoelectric thin film resonator which can reduce variations in resonant frequency and resonant resistance by uniformly planarizing a structural film. The method of manufacturing the piezoelectric thin film resonator includes the steps of forming sacrifice layer patterns on an upper surface of a mother substrate; forming a dielectric film on the sacrifice layer patterns; processing a surface of the dielectric film by a plasma treatment; forming vibration portions on the dielectric film, the vibration portions each being composed of two excitation electrodes and a piezoelectric thin film provided therebetween; etching the sacrifice layer patterns; and cutting the mother substrate into separate piezoelectric thin film resonators.


Find Patent Forward Citations

Loading…