The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Nov. 09, 2009
Applicants:

Seung-hwan Song, Suwon-si, KR;

Jaehong Kim, Seoul, KR;

Kyoung Lae Cho, Yongin-si, KR;

Yong June Kim, Seoul, KR;

Jun Jin Kong, Yongin-si, KR;

Jong Han Kim, Suwon-si, KR;

Inventors:

Seung-Hwan Song, Suwon-si, KR;

Jaehong Kim, Seoul, KR;

Kyoung Lae Cho, Yongin-si, KR;

Yong June Kim, Seoul, KR;

Jun Jin Kong, Yongin-si, KR;

Jong Han Kim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile semiconductor memory device and related method of determining a read voltage are disclosed. The non-volatile semiconductor memory device includes; a memory cell array including a plurality of memory cells, a read voltage determination unit configured to determine an optimal read voltage by comparing reference data obtained during a program operation with comparative data obtained during a subsequent read operation and changing a current read voltage to a new read voltage based on a result of the comparison, and a read voltage generation unit configured to generate the new read voltage in response to a read voltage control signal provided by the read voltage determination unit.


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