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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8773897 B1

PDFFull Text
Expired
Date of Patent:
Jul. 08, 2014

Filed:

Dec. 07, 2012

Writing circuit for a magnetoresistive memory cell, memory cell arrangement and method of writing into a magnetoresistive memory cell of a memory cell arrangement

Applicants:

Yan Hwee Sunny Lua, Singapore, SG;

Kejie Huang, Singapore, SG;

Inventors:

Yan Hwee Sunny Lua, Singapore, SG;

Kejie Huang, Singapore, SG;

Assignee:

Agency for Science, Technology and Research, Singapore, SG;

Attorney:

Blakely, Sokoloff, Taylor & Zafman LLP

Primary Examiner:

Anthan Tran

Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first electrical connecting terminal, a second electrical connecting terminal, a third electrical connecting terminal, a fourth electrical connecting terminal, a first reference potential terminal, a second reference potential terminal, a first switch configured to couple one of the first electrical connecting terminal, the second electrical connecting terminal, the third electrical connecting terminal and the fourth electrical connecting terminal to the magnetoresistive memory cell, and a second switch configured to couple the first reference potential terminal to the magnetoresistive memory cell if the first electrical connecting terminal or the second electrical connecting terminal is coupled to the magnetoresistive memory cell, and to couple the second reference potential terminal to the magnetoresistive memory cell if the third electrical connecting terminal or the fourth electrical connecting terminal is coupled to the magnetoresistive memory cell.

Find Patent Forward Citations

Lua, Yan Hwee Sunny. (2014). Writing circuit for a magnetoresistive memory cell, memory cell arrangement and method of writing into a magnetoresistive memory cell of a memory cell arrangement (U.S. Patent No. 8773897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8773897

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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