Resistive memory devices and related methods

Abstract

A resistive memory device. Implementations may include an array of memory cells including resistive memory elements which are coupled to isolation transistors and which may include a magnetic tunnel junction. A decoder decodes input address information to select a row of the array. A binarizer coupled to the memory array assigns binary weights to outputs of the memory array output through bit lines coupled to the memory cells. A summer sums the binary weighted outputs, and a quantizer generates an output digital code corresponding to data stored in a plurality of memory cells during a prior program cycle. The outputs of the memory array may be currents or voltages. In implementations multiple arrays of memory cells may be utilized and their respective outputs combined to form higher bit outputs, such as eight bit, twelve bit, sixteen bit, and so forth.