The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Apr. 15, 2010
Applicants:

Zhiyong LI, Palo Alto, CA (US);

Warren Robinett, Chapel Hill, NC (US);

Inventors:

Zhiyong Li, Palo Alto, CA (US);

Warren Robinett, Chapel Hill, NC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 5/12 (2006.01); B82Y 10/00 (2011.01); B82B 1/00 (2006.01); B82B 3/00 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 5/12 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); B82B 1/00 (2013.01); B82B 3/00 (2013.01); G11C 2213/81 (2013.01); Y10S 977/762 (2013.01); Y10S 977/94 (2013.01);
Abstract

Certain embodiments of the present invention are directed to a method of programming nanowire-to-conductive element electrical connections. The method comprises: providing a substrate including a number of conductive elements overlaid with a first layer of nanowires, at least some of the conductive elements electrically coupled to more than one of the nanowires through individual switching junctions, each of the switching junctions configured in either a low-conductance state or a high-conductance state; and switching a portion of the switching junctions from the low-conductance state to the high-conductance state or the high-conductance state to the low-conductance state so that individual nanowires of the first layer of nanowires are electrically coupled to different conductive elements of the number of conductive elements using a different one of the switching junctions configured in the high-conductance state. Other embodiments of the present invention are directed to a nanowire structure including a mixed-scale interface.


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