The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Jun. 13, 2012
Akinobu Onishi, Ota, JP;
Yasuhiro Hinokuma, Ora-gun, JP;
Kazuyuki Kobayashi, Ora-gun, JP;
Kengo Murase, Ora-gun, JP;
Akinobu Onishi, Ota, JP;
Yasuhiro Hinokuma, Ora-gun, JP;
Kazuyuki Kobayashi, Ora-gun, JP;
Kengo Murase, Ora-gun, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors Mand Mserving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors Mand Mfrom overvoltage is formed including P-channel type MOS transistors Mand M. The P-channel type MOS transistor Mis a first protection transistor to protect the P-channel type MOS transistor Mfrom overvoltage, and is connected to a drain of the P-channel type MOS transistor M. The P-channel type MOS transistor Mis a second protection transistor to protect the P-channel type MOS transistor Mfrom overvoltage, and is connected to a drain of the P-channel type MOS transistor M