The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Oct. 27, 2011
Applicants:
Huazhang Chen, Shenzhen, CN;
Xiaojun Cui, Shenzhen, CN;
Jianli Liu, Shenzhen, CN;
Inventors:
Assignee:
ZTE Corporation, Shenzhen, Guangdong Province, CN;
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/21 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H03F 1/02 (2006.01); H03F 3/60 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H03F 3/195 (2013.01); H03F 2200/411 (2013.01); H03F 3/245 (2013.01); H03F 1/0288 (2013.01); H03F 3/602 (2013.01);
Abstract
The present invention relates to a power amplifier apparatus and a power amplifier circuit thereof, the power amplifier circuit uses Doherty circuit structure, and it uses a high voltage heterojunction bipolor transistor (HVHBT) power amplifier to achieve a Carrier amplifier with the Doherty circuit structure, and uses a high electron mobility transistor (HEMT) power amplifier to achieve a Peak amplifier with the Doherty circuit structure. The power amplifier apparatus and a power amplifier circuit thereof in the present invention improves the efficiency of the power amplifier.