The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Apr. 19, 2012
Solomon Assefa, Ossining, NY (US);
William M. J. Green, Astoria, NY (US);
Marwan H. Khater, Astoria, NY (US);
Yurii A. Vlasov, Katonah, NY (US);
Solomon Assefa, Ossining, NY (US);
William M. J. Green, Astoria, NY (US);
Marwan H. Khater, Astoria, NY (US);
Yurii A. Vlasov, Katonah, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Line trenches are formed in a stack of a bulk semiconductor substrate and an oxygen-impermeable layer such that the depth of the trenches in the bulk semiconductor substrate is greater than the lateral spacing between a pair of adjacently located line trenches. Oxygen-impermeable spacers are formed on sidewalls of the line trenches. An isotropic etch, either alone or in combination with oxidation, removes a semiconductor material from below the oxygen-impermeable spacers to expand the lateral extent of expanded-bottom portions of the line trenches, and to reduce the lateral spacing between adjacent expanded-bottom portions. The semiconductor material around the bottom portions is oxidized to form a semiconductor oxide portion that underlies multiple oxygen-impermeable spacers. Semiconductor-on-insulator (SOI) portions are formed above the semiconductor oxide portion and within the bulk semiconductor substrate.