The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Mar. 16, 2011
Ki-won Kim, Suwon-si, KR;
Kap-soo Yoon, Seoul, KR;
Woo-geun Lee, Yongin-si, KR;
Yeong-keun Kwon, Suwon-si, KR;
Hye-young Ryu, Seoul, KR;
Jin-won Lee, Cheonan-si, KR;
Hyun-jung Lee, Dongducheon-si, KR;
Ki-Won Kim, Suwon-si, KR;
Kap-Soo Yoon, Seoul, KR;
Woo-Geun Lee, Yongin-si, KR;
Yeong-Keun Kwon, Suwon-si, KR;
Hye-Young Ryu, Seoul, KR;
Jin-Won Lee, Cheonan-si, KR;
Hyun-Jung Lee, Dongducheon-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.