The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Jul. 18, 2012
Mikael T Bjoerk, Affoltern am Albis, CH;
Andreas Christian Doering, Zufikon, CH;
Phillip Stanley-marbell, Adliswil, CH;
Kirsten Emilie Moselund, Zurich, CH;
Mikael T Bjoerk, Affoltern am Albis, CH;
Andreas Christian Doering, Zufikon, CH;
Phillip Stanley-Marbell, Adliswil, CH;
Kirsten Emilie Moselund, Zurich, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.