The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Jul. 12, 2011
Applicants:

Augustin J. Hong, Los Angeles, CA (US);

Ji-young Kim, Los Angeles, CA (US);

Kang-lung Wang, Santa Monica, CA (US);

Inventors:

Augustin J. Hong, Los Angeles, CA (US);

Ji-Young Kim, Los Angeles, CA (US);

Kang-Lung Wang, Santa Monica, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
Abstract

A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.


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