The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Sep. 20, 2013
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Tomislav Suligoj, Zagreb, HR;
Marko Koricic, Zagreb, HR;
Hidenori Mochizuki, Tokyo, JP;
Soichi Morita, Tokyo, JP;
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Abstract
A configuration of a lateral transistor suited for the hybrid-integration (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor, and a method for manufacturing the lateral transistor. A semiconductor device includes a HCBTand a CMOS transistorhybrid-integrated. The HCBThas an open regionopened by etching a device isolating oxide filmsurrounding an n-hill layer. An emitter electrodeA and a collector electrodeB are formed in the open regionand are composed of a polysilicon film having such a thickness as to expose the n-hill layerexposed by etching the device isolating oxide film, and an ultrathin oxide filmcovering at least a part of the n-hill layer. The ultrathin oxide filmfunctions as a protective film for protecting the n-hill layerfrom being etched when the polysilicon film is etched.