The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
May. 30, 2011
Hideaki Asao, Higashiomi, JP;
Rui Kamada, Higashiomi, JP;
Shuichi Kasai, Kagoshima, JP;
Seiji Oguri, Higashiomi, JP;
Isamu Tanaka, Higashiomi, JP;
Nobuyuki Horiuchi, Higashiomi, JP;
Kazumasa Umesato, Omihachiman, JP;
Hideaki Asao, Higashiomi, JP;
Rui Kamada, Higashiomi, JP;
Shuichi Kasai, Kagoshima, JP;
Seiji Oguri, Higashiomi, JP;
Isamu Tanaka, Higashiomi, JP;
Nobuyuki Horiuchi, Higashiomi, JP;
Kazumasa Umesato, Omihachiman, JP;
KYOCERA Corporation, Kyoto, JP;
Abstract
It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.