The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Feb. 11, 2009
Magnus Ahlstedt, Regensburg, DE;
Johannes Baur, Regensburg, DE;
Ulrich Zehnder, Rettenbach, DE;
Martin Strassburg, Tegernheim, DE;
Matthias Sabathil, Regensburg, DE;
Berthold Hahn, Hemau, DE;
Magnus Ahlstedt, Regensburg, DE;
Johannes Baur, Regensburg, DE;
Ulrich Zehnder, Rettenbach, DE;
Martin Strassburg, Tegernheim, DE;
Matthias Sabathil, Regensburg, DE;
Berthold Hahn, Hemau, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A semiconductor light-emitting diode () is proposed having at least one p-doped light-emitting diode layer (), an n-doped light-emitting diode layer () and an optically active zone () between the p-doped light-emitting diode layer () and the n-doped light-emitting diode layer (), having an oxide layer () consisting of a transparent conductive oxide, and having at least one mirror layer (), wherein the oxide layer () is disposed between the light-emitting diode layers () and the at least one mirror layer (), and comprises a first boundary surface () which faces the light-emitting diode layers () and a second boundary surface () which faces the at least one mirror layer (), and wherein the second boundary surface () of the oxide layer () has less roughness (R) than the first boundary surface () of the oxide layer ().