The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Mar. 14, 2013
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Hiroshi Inada, Yokohama, JP;

Sundararajan Balasekaran, Yokohama, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An active layer having a type 2 multi-quantum well structure includes a plurality of pair thickness groups having different thicknesses, including a first pair thickness group and a second pair thickness group. The first pair thickness group gincludes 10 to 100 pairs, each monolayer of the pairs having a thickness of 1.5 nm or more and less than 3.5 nm. The second pair thickness group gincludes 10 to 100 pairs, each monolayer of the pairs having a thickness of the minimum thickness (a second group minimum thickness) or more and 7 nm or less, the minimum thickness being larger than the maximum monolayer thickness 3.5 nm of the first pair thickness group.


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