The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Jun. 03, 2013
Sumitomo Electric Industries, Ltd., Osaka, JP;
Hideyuki Ijiri, Itami, JP;
Seiji Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A GaN substrate is stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m. The GaN substrate () has a planar first principal face (), and in an arbitrary point (P) along the first principal face () and separated 3 mm or more from the outer edge thereof, the GaN substrate's plane orientation has an off-inclination angle Δα of −10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane () that is inclined 50° or more, 90° or less with respect to a plane (), being either the (0001) plane or the (000) plane, through the arbitrary point. This enables storing GaN substrates whose principal-face plane orientation is other than (0001) or (000), making available GaN substrates with which semiconductor devices of favorable properties can be manufactured.