The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8772138 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 08, 2014

Filed:

May. 07, 2012
Applicants:

Chih-wei Yang, Yangmei, TW;

Ching-hwa Chang Jen, Yangmei, TW;

Inventors:

Chih-Wei Yang, Yangmei, TW;

Ching-Hwa Chang Jen, Yangmei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high voltage light emitting diode chip and its manufacturing method are provided. The high voltage light emitting diode chip can be manufactured by forming a plurality of light emitting diode units on a substrate and electrically connecting the light emitting diode units, wherein a trench with a width of about 0.5 μm to about 7 μm is present between every two adjacent light emitting diode units to isolate the light emitting diode units. The procedure for manufacturing the high voltage light emitting diode chip is simple and the high voltage light emitting diode chip that is produced can exhibit satisfying luminous efficiency.


Find Patent Forward Citations

Yang, Chih-Wei. (2014). High voltage light emitting diode chip and its manufacturing method (U.S. Patent No. 8772138). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8772138

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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