The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Oct. 07, 2008
Shunpei Yamazaki, Setagaya, JP;
Junpei Momo, Sagamihara, JP;
Fumito Isaka, Zama, JP;
Eiji Higa, Atsugi, JP;
Masaki Koyama, Atsugi, JP;
Akihisa Shimomura, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Junpei Momo, Sagamihara, JP;
Fumito Isaka, Zama, JP;
Eiji Higa, Atsugi, JP;
Masaki Koyama, Atsugi, JP;
Akihisa Shimomura, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.