The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Jul. 17, 2013
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Takeyoshi Masuda, Osaka, JP;

Yu Saitoh, Osaka, JP;

Kenji Hiratsuka, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon carbide substrate is prepared which has a main surface covered with a silicon dioxide layer. In the silicon dioxide layer, an opening is formed by etching. In the opening, a residue resulting from the etching is on the silicon carbide substrate. The residue is removed by plasma etching in which only an inert gas is introduced. After removing the residue, under heating, a reactive gas is supplied to the silicon carbide substrate covered with the silicon dioxide layer having the opening formed therein. In this way, a trench is formed in the main surface of the silicon carbide substrate.


Find Patent Forward Citations

Loading…