The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Aug. 28, 2012
Yu-chueh Hung, Hsin Chu, TW;
Wei-ting Hsu, Hsin Chu, TW;
Ting-yu Lin, Hsin Chu, TW;
Ljiljana Fruk, Karlsruhe, DE;
Yu-Chueh Hung, Hsin Chu, TW;
Wei-Ting Hsu, Hsin Chu, TW;
Ting-Yu Lin, Hsin Chu, TW;
Ljiljana Fruk, Karlsruhe, DE;
National Tsing Hua University, Hsin Chu, TW;
Abstract
The present invention relates to a write-once and read-many-times memory device and the fabricating method thereof. The structure of the memory device comprises: a substrate, a first electrode, a double helix biopolymer layer and a second electrode, and a plurality of metal nanoparticles are distributed in the double helix biopolymer layer. The first electrode is disposed on the substrate, the double helix biopolymer layer is disposed on the first electrode and the substrate, and the second electrode is disposed on the double helix biopolymer layer. When illuminating, the memory device will produce a low-conductivity state and high-conductivity state for writing data. Later, when a voltage is applied to the first electrode and the second electrode, the data will be read.