The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Oct. 25, 2010
Stuart Ross Wenham, Cronulla, AU;
Budi Santoso Tjahjono, Kensington, AU;
Nicole Bianca Kuepper, Greenwich, AU;
Alison Joan Lennon, Rozelle, AU;
Stuart Ross Wenham, Cronulla, AU;
Budi Santoso Tjahjono, Kensington, AU;
Nicole Bianca Kuepper, Greenwich, AU;
Alison Joan Lennon, Rozelle, AU;
Newsouth Innovations PTY Limited, Unsw Sydney, New South Wales, AU;
Abstract
A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a sheet resistance of 10-40 Ω/□. The emitter surface layer is then etched back to increase the sheet resistance of the emitter surface layer. Finally the surface is selectively plated. A method of fabrication of a silicon solar cell includes performing a front surface emitter diffusion of n-type dopant and then performing a dielectric deposition on the front surface by PECVD. The dielectric deposition comprises: The silicon is then annealed to drive hydrogen from the silicon nitride layer into the silicon to passivate the silicon.