The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Jan. 24, 2008
Applicants:

Hiroyuki Kawakami, Ichihara, JP;

Katsuyasu Niijima, Ichihara, JP;

Naoki Tomori, Ichihara, JP;

Daichi Takemori, Chiba, JP;

Takuya Imai, Ichihara, JP;

Inventors:

Hiroyuki Kawakami, Ichihara, JP;

Katsuyasu Niijima, Ichihara, JP;

Naoki Tomori, Ichihara, JP;

Daichi Takemori, Chiba, JP;

Takuya Imai, Ichihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/28 (2006.01); B32B 27/38 (2006.01); B32B 27/20 (2006.01); C08K 3/36 (2006.01); H01L 23/29 (2006.01); C08G 59/62 (2006.01); C08L 63/00 (2006.01); C08K 3/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/293 (2013.01); H01L 23/295 (2013.01); C08G 59/621 (2013.01); C08L 63/00 (2013.01); C08K 3/0033 (2013.01); C08L 2666/54 (2013.01); C08L 2666/72 (2013.01);
Abstract

A sealing film which includes a resin layer having a flow within the range of 150 to 1800 μm at 80° C., or having a resin layer with a viscosity within the range of 10000 to 100000 Pa·s in a B-stage state at 50 to 100° C. in thermosetting viscoelasticity measurement, and containing: (A) both (a1) a high-molecular-weight component including crosslinking functional groups and having a weight-average molecular weight of 100,000 or more and a Tg within the range of −50 to 50° C., and (a2) a thermosetting component including an epoxy resin as a main component, (B) a filler having an average particle size within the range of 1 to 30 μm, and (C) a colorant, as well as a manufacturing method thereof and a semiconductor device using the same.


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