The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

May. 02, 2011
Applicants:

Shigang LU, Beijing, CN;

Juanyu Yang, Beijing, CN;

Xiangjun Zhang, Beijing, CN;

Surong Kan, Beijing, CN;

Inventors:

Shigang Lu, Beijing, CN;

Juanyu Yang, Beijing, CN;

Xiangjun Zhang, Beijing, CN;

Surong Kan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 1/00 (2006.01);
U.S. Cl.
CPC ...
C25B 1/006 (2013.01); Y10S 977/762 (2013.01); Y10S 977/814 (2013.01); Y10S 977/899 (2013.01);
Abstract

An electrochemical method for producing Si nanopowder, Si nanowires and/or Si nanotubes directly from compound SiX or a mixture containing a silicon compound SiX, the method comprises: providing an electrolysis cell having a cathode, an anode and an electrolyte, using the compound SiX or the mixture containing compound SiX as a cathode and immersing the cathode in an electrolyte comprising a metal compound molten salt, applying a potential between the cathode and the anode in the electrolysis cell, and forming one or more of Si nanopowder, Si nanowires and Si nanotubes on the cathode electrode. The method has advantages of: 1) shorter production processing, 2) inexpensive equipment, 3) convenient operation, 4) reduction of contaminate, 5) easily available feed materials, and 6) easy to achieve continuous production. This is a new field of using electrochemical method for producing one-dimensional Si nano material, and a new method of producing Si nanopowder, Si nanowires and Si nanotubes.


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