The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Mar. 24, 2009
Applicants:

Masanobu Horio, Miyoshi, JP;

Naotaka Nishida, Toyota, JP;

Hiroshi Isono, Mishima, JP;

Inventors:

Masanobu Horio, Miyoshi, JP;

Naotaka Nishida, Toyota, JP;

Hiroshi Isono, Mishima, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F16D 65/84 (2006.01); H01L 35/32 (2006.01); B60T 1/10 (2006.01); F16D 65/092 (2006.01); B60T 17/22 (2006.01); F16D 61/00 (2006.01); F16D 69/00 (2006.01);
U.S. Cl.
CPC ...
B60T 17/221 (2013.01); H01L 35/32 (2013.01); B60T 1/10 (2013.01); F16D 65/84 (2013.01); F16D 65/092 (2013.01); F16D 2069/002 (2013.01); F16D 61/00 (2013.01);
Abstract

Provided is a braking system which can enhance the power generation efficiency of a thermoelectric conversion element by efficiently recovering the heat generated during braking, or by increasing the temperature difference between a heat source and the thermoelectric conversion element. A brake pad body in a brake pad is provided with a thermoelectric conversion element. The thermoelectric conversion element includes an n-type semiconductor layer and a p-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are provided in a recess formed in the back surface of the brake pad body.


Find Patent Forward Citations

Loading…