The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jul. 11, 2012
Yong-sung Cho, Suwon-si, KR;
Nam-hee Lee, Seoul, KR;
Sang-yong Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In method of programming a nonvolatile memory device, multi-bit data are loaded into a plurality of page buffers. Multi-level cells included in a multi-level cell block are programmed to a plurality of intermediate program states including a first intermediate program state and a second intermediate program state which is higher than the first intermediate program state based on the multi-bit data. Whether the multi-level cells are programmed to the plurality of intermediate program states is verified. Cell group information for the first intermediate program state is generated by checking whether a result of the verification for the second intermediate program state satisfies a predetermined criterion. The multi-level cells are programmed to a plurality of target program states corresponding to the multi-bit data based on the cell group information.