The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Apr. 29, 2009
Applicants:

Yukiko Furukawa, Kimitsu, JP;

Klaus Reimann, Eindhoven, NL;

Friso Jacobus Jedema, Eindhoven, NL;

Markus Petrus Josephus Tiggelman, Eindhoven, NL;

Aarnoud Laurens Roest, Geldrop, NL;

Inventors:

Yukiko Furukawa, Kimitsu, JP;

Klaus Reimann, Eindhoven, NL;

Friso Jacobus Jedema, Eindhoven, NL;

Markus Petrus Josephus Tiggelman, Eindhoven, NL;

Aarnoud Laurens Roest, Geldrop, NL;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (∈) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.


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