The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
May. 31, 2011
Yvan Avenas, Poisat, FR;
Jean-christophe Crebier, Grenoble, FR;
Julie Widiez, Grenoble, FR;
Laurent Clavelier, Saint Egreve, FR;
Kremena Vladimirova, Grenoble, FR;
Yvan Avenas, Poisat, FR;
Jean-Christophe Crebier, Grenoble, FR;
Julie Widiez, Grenoble, FR;
Laurent Clavelier, Saint Egreve, FR;
Kremena Vladimirova, Grenoble, FR;
Commissariat a l'energie atomique et aux energies alternatives, Paris, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Institut Polytechnique de Grenoble, Grenoble, FR;
Abstract
The invention relates to an electronic chip, comprising: a semiconductor substrate () having an active area () formed by at least one P doped region and at least one N doped region which form one or more P-N junctions through which most of the useful current flows when said electronic chip is in a conductive state, and at least one channel () through which a heat transport coolant can flow, the channel(s) passing through at least said P or N doped region of the active area. Each channel () is rectilinear and passes through the substrate () in a direction which is collinear with a direction F to the nearest ±45°, where the direction F is perpendicular to the plane of the substrate.