The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Jan. 09, 2014
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Teppei Iwase, Hyogo, JP;

Takashi Yui, Shiga, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49534 (2013.01); H01L 23/49579 (2013.01);
Abstract

A semiconductor device includes a first semiconductor chip; an extension formed at a side surface of the first semiconductor chip; a connection terminal formed on the first semiconductor chip; a re-distribution part formed over the first semiconductor chip and the extension and including an interconnect connected to the connection terminal and an insulating layer covering the interconnect; and an electrode formed above the extension on a surface of the re-distribution part and connected to the interconnect at an opening of the insulating layer. The electrode is mainly made of a material having an elastic modulus higher than that of the interconnect. The electrode includes a bonding region where the electrode is bonded to the interconnect at the opening, and an outer region closer to an end part of the extension. The interconnect is formed so as not to continuously extend to a position right below the outer region.


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