The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Mar. 22, 2012
Ronald R. Bowman, Chandler, AZ (US);
Ronald R. Bowman, Chandler, AZ (US);
Other;
Abstract
A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.