The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Mar. 09, 2012
Applicants:

Tony Bramian, Torrance, CA (US);

Jason Zhang, Monterey Park, CA (US);

Inventors:

Tony Bramian, Torrance, CA (US);

Jason Zhang, Monterey Park, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); H01L 21/8236 (2013.01);
Abstract

There are disclosed herein various implementations of composite semiconductor devices with active oscillation control. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device. The LV device may be configured to include one or both of a reduced output resistance due to, for example, a modified body implant and a reduced transconductance due to, for example, a modified oxide thickness to cause a gain of the composite semiconductor device to be less than approximately 10,000.


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