The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jun. 30, 2011
Applicants:
Sanjiv Sambandan, Bangalore, IN;
Robert A. Street, Palo Alto, CA (US);
Inventors:
Sanjiv Sambandan, Bangalore, IN;
Robert A. Street, Palo Alto, CA (US);
Assignee:
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
A textured thin film transistor is comprised of an insulator sandwiched between a textured gate electrode and a semi-conductor. A source electrode and drain electrode are fabricated on a surface of the semi-conductor. The textured gate electrode is fabricated such that a surface is modified in its texture and/or geometry, such modifications affecting the transistor current.
Sambandan, Sanjiv. (2014). Textured gate for high current thin film transistors (U.S. Patent No. 8766367). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8766367
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile