The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Sep. 06, 2011
Applicants:
Dong-kak Lee, Seoul, KR;
Hee-don Hwang, Yongin-si, KR;
Inventors:
Dong-kak Lee, Seoul, KR;
Hee-don Hwang, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a device isolation pattern in which a polysilicon layer pattern doped with oxygen, carbon or nitrogen is interposed between an inner wall of a trench and a nitride liner. The semiconductor device includes a semiconductor substrate including a trench, a polysilicon layer pattern on a surface of the trench, a nitride layer pattern on the polysilicon layer pattern, and an insulation layer pattern on the nitride layer pattern and filling the trench. The polysilicon layer pattern may be doped with oxygen, carbon and/or nitrogen. Related manufacturing methods are also disclosed.