The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Feb. 03, 2012
Masahiro Teshima, Unterschleissheim, DE;
Razmik Mirzoyan, Unterschleissheim, DE;
Anatoly Pleshko, Moscow, RU;
Ljudmila Aseeva, Moscow, RU;
Masahiro Teshima, Unterschleissheim, DE;
Razmik Mirzoyan, Unterschleissheim, DE;
Boris Anatolievich Dolgoshein, Moscow, RU;
Anatoly Pleshko, Moscow, RU;
Abstract
The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells.