The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Oct. 31, 2012
Panasonic Corporation, Osaka, JP;
Yoshiya Moriyama, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a MIS transistor. The MIS transistor includes an active region surrounded by an isolation region in a semiconductor substrate, a gate insulating film formed on the active region and the isolation region, and having a high dielectric constant film, and a gate electrode formed on the gate insulating film. A nitrided region is formed in at least part of a portion of the gate insulating film that is located on the isolation region. A concentration of nitrogen contained in the nitrided region is nx, and a concentration of nitrogen contained in a portion of the gate insulating film that is located on the active region is n, wherein a relationship of nx>n is satisfied.