The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jun. 14, 2012
Yuta Endo, Kanagawa, JP;
Yuki Imoto, Kanagawa, JP;
Yuko Takabayashi, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Yuta Endo, Kanagawa, JP;
Yuki Imoto, Kanagawa, JP;
Yuko Takabayashi, Kanagawa, JP;
Yasumasa Yamane, Kanagawa, JP;
Abstract
A transistor in which an electron state at an interface between an oxide semiconductor film and an underlayer film in contact with the oxide semiconductor film is favorable is provided. A value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within the interface and a lattice constant of the semiconductor film by the nearest neighbor interatomic distance of the underlayer film within the interface is less than or equal to 0.15. For example, an oxide semiconductor film is deposited over an underlayer film which contains stabilized zirconia which has a cubic crystal structure and has the (111) plane orientation, whereby the oxide semiconductor film including a crystal region having a high degree of crystallization can be provided directly on the underlayer film.