The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jun. 17, 2008
Applicant:
Masaru Takaishi, Kyoto, JP;
Inventor:
Masaru Takaishi, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a semiconductor device in which on-resistance is largely reduced based on a new principle of operation. In the semiconductor device, if an embedded electrode is at negative potential, a depletion layer is formed from a trench to a neighboring trench so that a channel is turned off. If the embedded electrode is at a positive potential, the depletion layer is not formed in every region between the neighboring trenches so that the channel is turned on.
Takaishi, Masaru. (2014). Semiconductor device (U.S. Patent No. 8766317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8766317
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile